P3203CMG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 32mΩ @VGS = 4.5V
ID 6A
SOT-23
ABS...
P3203CMG
N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 32mΩ @VGS = 4.5V
ID 6A
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source
Voltage
VDS 30
Gate-Source
Voltage
VGS ±12
Continuous Drain Current2
TA = 25 °C TA = 70 °C
ID
6 5
Pulsed Drain Current1,2
IDM 30
Power Dissipation
TA = 25 °C TA = 70 °C
PD
1.25 0.8
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient3 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed.
SYMBOL RqJA
TYPICAL
MAXIMUM UNITS 100 °C / W
REV 1.1
1 2014/7/28
P3203CMG
N-Channel Enhancement Mode
MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage Gate Threshold
Voltage Gate-Bod...