P3503QVG

www.DataSheet4U.com NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P3503QVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 30 -30 RDS(ON) 25m 35m ID 7A -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range 1 SYMBOL VDS VGS N-Channel P-Channel 30 ±20 7 6 20 2 1.3 -55 to 150 -30 ±20 -6 -5 -20 UNITS V V TC = 25 °C TC = 70 °C ID IDM A TC = 25 °C TC = 70 °C PD Tj, Tstg W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 SYMBOL RθJA TYPICAL 48 MAXIMUM 62.5 UNITS °C / W Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA VGS = 0V, ID = -250µA VDS = VGS, ID = 250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V VDS = 0V, VGS = ±20V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 30 -30 1 -1 1.5 -1.5 2.5 -2.5 ±100 ±100 nA V MIN TYP MAX UNIT Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS 1 OCT-08-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V P3503QVG SOP-8 Lead-Free 1 -1 10 -10 20 -20 25 44 18 28 19 10 37 60 25 35 S m A µA N-Ch P-Ch Zero Gate Voltage Drain Cu...