MOSFET. P3504BD Datasheet

P3504BD Datasheet PDF

Part P3504BD
Description N-Channel MOSFET
Feature P3504BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 40mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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P3504BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P3504BD Datasheet




P3504BD
P3504BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 40mΩ @VGS = 10V
ID
20A
TO-252
100% Rg tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
100% UIS tested
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
Gate-Source Voltage
VDS 40 V
VGS ±20 V
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
TC = 25 °C
TC = 70 °C
L = 0.1mH
ID
IDM
IAS
EAS
20
16
A
60
20
20 mJ
Power Dissipation
TC = 25 °C
TC = 70 °C
Operating Junction & Storage Temperature Range
PD
TJ, TSTG
30
20
-55 to 150
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
4.1
80
UNITS
°C / W
Ver 1.0
1 2013-4-10



P3504BD
P3504BD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
40
2.0 2.4 3.0
±250
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 32V, VGS = 0V
VDS = 30V, VGS = 0V , TC = 125 °C
VDS = 5V, VGS = 10V
60
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 5V, ID = 8A
VGS = 10V, ID = 10A
VDS = 5V, ID = 10A
37 60
28 40
18
DYNAMIC
Input Capacitance
Ciss
630
Output Capacitance
Coss VGS = 0V, VDS = 20V, f = 1MHz
124
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Crss
Qg
Qgs
Qgd
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 10A
64
11
2.6
2.2
Gate Resistance
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 20V,
ID@ 10A, VGS = 10V, RGEN = 6Ω
1.78
15
25
45
40
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Forward Voltage1
VSD IF = 10A, VGS = 0V
1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 10A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
35
41
2Independent of operating temperature.
UNITS
V
nA
mA
A
S
pF
nC
Ω
nS
V
nS
nC
Ver 1.0
2 2013-4-10




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