P3504BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 40mΩ @VGS = 10V
ID 20A
TO-252
100%...
P3504BD
N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 40mΩ @VGS = 10V
ID 20A
TO-252
100% Rg tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
100% UIS tested
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source
Voltage Gate-Source
Voltage
VDS 40 V VGS ±20 V
Continuous Drain Current
Pulsed Drain Current1 Avalanche Current Avalanche Energy
TC = 25 °C TC = 70 °C
L = 0.1mH
ID
IDM IAS EAS
20 16
A 60 20 20 mJ
Power Dissipation
TC = 25 °C TC = 70 °C
Operating Junction & Storage Temperature Range
PD TJ, TSTG
30 20 -55 to 150
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC RqJA
TYPICAL
MAXIMUM
4.1 80
UNITS °C / W
Ver 1.0
1 2013-4-10
P3504BD
N-Channel Enhancement Mode
MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS MIN TYP MAX
STATI...
