P3506DD

NIKO-SEM P-Channel Logic Level Enhancement Mode P3506DD Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 35mΩ ID -26A D G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy 2 Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C L = 0.1mH Tc = 25 °C Tc = 100 °C VDS VGS ID IDM IAS EAS PD TJ, Tstg 1. GATE 2. DRAIN 3. SOURCE LIMITS -60 ±20 -26 -16 -100 -39 77 42 17 -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RθJc Junction-to-Ambient RθJA 1Pulse width limited by maximum junction temperature. 2VDD = -30V . Starting TJ = 25˚C. TYPICAL MAXIMUM 3 50 UNITS °C / W °C / W ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CON...