P4006DV
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
40mΩ @VGS = -10V
ID -5.9A
SOP- 08...
P4006DV
P-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
40mΩ @VGS = -10V
ID -5.9A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source
Voltage
VDS -60
Gate-Source
Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
-5.9 -4.7 -40
Avalanche Current Avalanche Energy2
L = 0.1mH
IAS EAS
-40 80
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2.5 1.6
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2VDD = -30V. Starting TJ = 25°C.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 25 50
UNITS °C / W
Ver 1.0
1 2012/4/13
P4006DV
P-Channel Enhancement Mode
MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS MIN TYP...
