FEATURES
Full CMOS
High Speed (Equal Access and Cycle Times) – 12/15/20/25 ns (Commercial) – 12/15/20/25 ns (Ind...
FEATURES
Full
CMOS
High Speed (Equal Access and Cycle Times) – 12/15/20/25 ns (Commercial) – 12/15/20/25 ns (Industrial) – 25/35/45/55/70 ns (Military)
Single 5V±10% Power Supply
Data Retention with 2.0V Power Supply (P4C1257L)
P4C1257/P4C1257L
ULTRA HIGH SPEED 256K x 1 STATIC
CMOS RAMS
Separate Data I/O Three-State Output
Fully TTL Compatible Inputs and Outputs Standard Pinout (JEDEC Approved) – 24-Pin 300 mil DIP, SOJ – 28-Pin 350x550 mil LCC – 28-Pin Flatpack
DESCRIPTION
The P4C1257/P4C1257L are 256Kx1-bit ultra high-speed static RAMs. The
CMOS memories require no clocks or refreshing and have equal access and cycle times. The RAMs operate from a single 5V ± 10% tolerance power supply. Data integrity is maintained for supply
voltages down to 2.0V, typically drawing 10µA.
Access times as fast as 12 nanoseconds are available, greatly enhancing system speeds.
The P4C1257/P4C1257L are available in 24-pin 300 mil DIP and SOJ, 28-pin LCC and Flatpack packages, providing excellent board level densities.
Functional Block Diagram
Pin ConfigurationS
Document # SRAM137 REV 01
DIP (P4, C4) SOJ (J4)
LCC (L5)
Revised June 2013
P4C1257/P4C1257L - ULTRA HIGH SPEED 256K X 1 STATIC
CMOS RAMS
Maximum Ratings(1)
Sym Parameter
VCC
Power Supply Pin with Respect to GND
Terminal
Voltage with VTERM Respect to GND (up to
7.0V)
TA Operating Temperature
TBIAS Temperature Under Bias
TSTG Storage Temperature
PT Power Dissipation
IOUT DC Output Current
Val...
