P4C423

P4C423 HIGH SPEED 256 x 4 STATIC CMOS RAM FEATURES High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) CMOS for Low Power – 495 mW Max. – 10/12/15/20/25 (Commercial) – 495 mW Max. – 15/20/25/35 (Military) Single 5V±10% Power Supply Separate I/O Fully TTL Compatible Inputs and Outputs Resistant to single event upset and latchup resulting from advanced process and design improvements Standard 24-pin 300 mil DIP package. DESCRIPTION The P4C423 is a 1,024-bit high-speed (10ns) Static RAM with a 256 x 4 organization. The memory requires no clocks or refreshing and has equal access and cycle times. Inputs and outputs are fully TTL compatible. Operation is from a single 5 Volt supply. Easy memory expansion is provided by an active LOW chip select one (CS1) and active HIGH chip select two (CS2) as well as 3-state outputs. In addition to high performance and high density, the device features latch-up protection, single event and upset protection. The P4C423 is offered in a 24-pin 300 mil DIP. Devices are offered in both commercial and military temperature ranges. FUNCTIONAL BLOCK DIAGRAM PIN CONFIGURATION DIP (C4) Document # SRAM108 REV OR Revised October 2005 1 P4C423 MAXIMUM RATINGS(1) Symbol Parameter VCC Power Supply Pin with Respect to GND VTERM Terminal Voltage with Respect to GND (up to 7.0V) TA Operating Temperature Value Unit – 0.5 to +7 V – 0.5 to VCC +0.5 V – 55 to +125 °C RECOMMENDED OPERATING CONDIT...