P5506NVG
N- & P- Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
NChannel PChannel
60 55mΩ @VGS = ...
P5506NVG
N- & P- Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
NChannel PChannel
60 55mΩ @VGS = 10V -60 80mΩ @VGS = 10V
ID 4.5A -3.5A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS Drain-Source
Voltage
SYMBOL VDS
N- PChannel Channe
60 -60
Gate-Source
Voltage
VGS ±20 ±20
Continuous Drain Current
TA = 25 °C TA = 70 °C
ID
4.5 -3.5 4 -3
Pulsed Drain Current1
IDM 20 -20
Avalanche Current
IAS 18 23
Avalanche Energy
L =0.1mH
EAS
16 26
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2 1.3
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA
TYPICAL
MAXIMUM UNITS 62.5 °C / W
REV 1.1
1 2014/5/28
P5506NVG
N- & P- Channel Enhancement Mode
MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST...
