P7503BMG

P7503BMG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 75mΩ @VGS = 4.5V ID 2.5A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 2.5 1.6 10 Avalanche Current IAS 12 Avalanche Energy L = 0.1mH EAS 7 Power Dissipation TA = 25 °C TA = 70 °C PD 0.75 0.3 Operating Junction & Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.) TJ, TSTG TL -55 to 150 275 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJA TYPICAL MAXIMUM UNITS 166 °C / W Ver 1.0 1 2012/4/12 P7503BMG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Brea...