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P7NB60FP STP7NB60FP Datasheet PDFSTP7NB60FP STP7NB60FP |
| Part Number | P7NB60FP |
|---|---|
| Description | STP7NB60FP |
| Feature | www. DataSheet4U. com STP7NB60 STP7NB60FP N - CHANNEL ENHANCEMENT MODE PowerMESH ™ MOSFET TYPE STP7NB60 STP7NB60F P s s s s s V DSS 600 V 600 V R DS(on) < 1. 2 Ω < 1. 2 Ω ID 7. 2 A 4. 1 A TYPI CAL RDS(on) = 1. 0 Ω EXTREMELY HIGH dv /dt CAPABILITY 100% AVALANCHE TESTED VE RY LOW INTRINSIC CAPACITANCES GATE CHAR GE MINIMIZED 1 2 3 1 2 3 DESCRIPTION U sing the latest high voltage MESH OVERL AY™ process, SGS-Thomson has designed an advanced family of power MOSFETs wi th outstanding performances. The new pa tent pending strip layout coupled with the Company’s proprietary edge termin ation structure, gives the . |
| Manufacture | ST Microelectronics |
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| Part Number | P7NB60FP |
|---|---|
| Description | STP7NB60FP |
| Feature | www. DataSheet4U. com STP7NB60 STP7NB60FP N - CHANNEL ENHANCEMENT MODE PowerMESH ™ MOSFET TYPE STP7NB60 STP7NB60F P s s s s s V DSS 600 V 600 V R DS(on) < 1. 2 Ω < 1. 2 Ω ID 7. 2 A 4. 1 A TYPI CAL RDS(on) = 1. 0 Ω EXTREMELY HIGH dv /dt CAPABILITY 100% AVALANCHE TESTED VE RY LOW INTRINSIC CAPACITANCES GATE CHAR GE MINIMIZED 1 2 3 1 2 3 DESCRIPTION U sing the latest high voltage MESH OVERL AY™ process, SGS-Thomson has designed an advanced family of power MOSFETs wi th outstanding performances. The new pa tent pending strip layout coupled with the Company’s proprietary edge termin ation structure, gives the . |
| Manufacture | ST Microelectronics |
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