P8010BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
85mΩ @VGS = 10V
ID 3.5A
SOP-8
AB...
P8010BV
N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
85mΩ @VGS = 10V
ID 3.5A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source
Voltage
VDS 100
Gate-Source
Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
3.5 2.8 20
Avalanche Current
IAS 12
Avalanche Energy
L =0.1mH
EAS
7.2
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2.4 1.5
Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Case
RqJC
25
Junction-to-Ambient2
RqJA
52
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measureed with the device mounted on 1in2 FR-4 board with 2oz.Copper, in a still air
environment with TA =25°C.The value in any given application depends on the user's specific board design.
UNITS °C / ...
