P8315AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
83mΩ @VGS = 10V
ID 20A
TO-252
AB...
P8315AD
N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
83mΩ @VGS = 10V
ID 20A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source
Voltage
VDS 150
Gate-Source
Voltage
VGS ±30
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
20 12 50
Avalanche Current
IAS 20
Avalanche Energy3
EAS 220
Power Dissipation
TC = 25 °C TC = 100 °C
PD
73 29
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
50
Junction-to-Case
RqJC
1.7
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. 3Starting Tj =25 °C,IAS=20A,L=1.1mH,VDD=50V.
UNITS °C / W
REV 1.0
1 2013-12-13
P8315AD
N-Channel...
