NIKO-SEM
N-Channel Enhancement Mode
PA520BA
Field Effect Transistor
SOT-23-6
Halogen-Free & Lead-Free
D
PRODUCT S...
NIKO-SEM
N-Channel Enhancement Mode
PA520BA
Field Effect Transistor
SOT-23-6
Halogen-Free & Lead-Free
D
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 20mΩ
ID 6A
G S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source
Voltage
Continuous Drain Curren Pulsed Drain Current1
TA = 25 °C TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM IAS EAS
PD
Tj, Tstg
G: GATE D: DRAIN S: SOURCE
LIMITS ±20 6 4.7 30 17 15 1.1 0.7
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATING THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Case Junction-to-Ambient2
RθJC RθJA
40 °C / W
110
1Pulse width limited by maximum junction temperature. 2 The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
ELECTRICAL CHARACTERISTICS (TJ ...
