DatasheetsPDF.com

PA606HAG

UNIKC

N-Channel MOSFET

PA606HAG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 55V 160mΩ @VGS = 10V ID 1.8A TSOP- 06 ...


UNIKC

PA606HAG

File Download Download PA606HAG Datasheet


Description
PA606HAG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 55V 160mΩ @VGS = 10V ID 1.8A TSOP- 06 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 55 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 1.8 1.4 11 Avalanche Current IAS 11 Avalanche Energy L = 0.1mH EAS 6 Power Dissipation TA = 25 °C TA = 70 °C PD 0.9 0.6 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJA TYPICAL MAXIMUM UNITS 140 °C / W Ver 1.0 1 2012/4/12 PA606HAG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Volt...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)