PAD SERIES
Linear Integrated Systems
FEATURES DIRECT REPLACEMENT FOR SILICONIX PAD SERIES REVERSE BREAKDOWN VOLTAGE REVE...
PAD SERIES
Linear Integrated Systems
FEATURES DIRECT REPLACEMENT FOR SILICONIX PAD SERIES REVERSE BREAKDOWN
VOLTAGE REVERSE CAPACITANCE ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (PAD) Continuous Power Dissipation (J/SSTPAD) Maximum Currents Forward Current (PAD) Forward Current (J/SSTPAD) 50mA 10mA * Cathode tied to Case 300mW 350mW -65 to +150 °C -55 to +135 °C JPAD
TO-92 BOTTOM VIEW
A
1 3
PICO AMPERE DIODES
BVR ≥ -30V Crss ≤ 2.0pF
PAD1,2,5
TO-72 BOTTOM VIEW
2
PAD*
TO-72 BOTTOM VIEW
2
K
K*
C
A
1
SSTPAD
SOT-23 TOP VIEW K
1 3
K 1
A 2
A
K
2
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL BVR VF Crss CHARACTERISTIC Reverse Breakdown
Voltage Forward
Voltage Total Reverse Capacitance PAD1,5 All Others ALL PAD ALL SSTPAD ALL JPAD MIN -45 -30 -35 0.8 0.5 1.5 1.5 0.8 2 pF V IR = -1µA IF = 5mA VR = -5V, f = 1MHz TYP MAX UNITS CONDITIONS
SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC (SST/J)PAD1 (SST/J)PAD2 (SST/J)PAD5 IR Maximum Reverse 2 Leakage Current (SST/J)PAD10 (SST/J)PAD20 (SST/J)PAD50 (SST/J)PAD100 (SST/J)PAD200 (SST/J)PAD500 PAD2 -1 -2 -5 -10 -20 -50 -100 -5 -10 -20 -50 -100 -200 -500 -5 -10 -20 -50 pA VR = -20V JPAD2 SSTPAD2 UNITS CONDITIONS
Linear Integrated Systems
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