Diodes. PAD1 Datasheet

PAD1 Datasheet PDF


Part PAD1
Description Low-Leakage Pico-Amp Diodes
Feature . HSiliconix incorporated PAD1 SERIES Low-Leakage Pico-Amp Diodes The PADl Series of extremely low.
Manufacture Siliconix
Datasheet
Download PAD1 Datasheet

Low Leakage Pico Amp Diodes CORPORATION PAD1 / PAD2 / PAD5 PAD1 Datasheet
PAD SERIES Linear Integrated Systems FEATURES DIRECT REPLACE PAD1 Datasheet
PAD1 LOW LEAKAGE PICO-AMP DIODE Linear Systems replaces dis PAD1 Datasheet
. HSiliconix incorporated PAD1 SERIES Low-Leakage Pico-Amp PAD1 Datasheet
Low Leakage Pico Amp Diodes CORPORATION PAD1 / PAD2 / PAD5 PAD10 Datasheet
PAD SERIES Linear Integrated Systems FEATURES DIRECT REPLACE PAD10 Datasheet
PAD10 LOW LEAKAGE PICO-AMP DIODE Linear Systems replaces di PAD10 Datasheet
. HSiliconix incorporated PAD1 SERIES Low-Leakage Pico-Amp PAD10 Datasheet
PAD SERIES Linear Integrated Systems FEATURES DIRECT REPLACE PAD100 Datasheet
PAD100 LOW LEAKAGE PICO-AMP DIODE Linear Systems replaces d PAD100 Datasheet




PAD1
. HSiliconix
incorporated
PAD1 SERIES
Low-Leakage Pico-Amp Diodes
The PADl Series of extremely low-leakage diodes
provides a superior alternative to conventional
diode technology when reverse current (leakage)
must be minimized. These devices feature leakage
currents ranging from -1 pA (PAD1) to -100 pA
(PAD100) to support a wide range of applications.
The PADl Series is well suited for use in
applications such as input protection for operational
amplifiers. Its hermetically sealed metal can is
available with full military processing per
MIL-S-19500. (See Section 1.)
SIMILAR PRODUCTS
" TO-92, See JPAD5 Series
• SOT-23, See SSTPAD5 Series
• Duals, See DPADl Series
• Chips, Order PADXXCHP
PART NO.
PADl
PAD2
PAD5
PAD10
PAD20
PAD50
PAD100
IR
(pA)
-1
-2
-5
-10
-20
-50
-100
TO-1S (MODIFIED)
BOTTOM VIEW
TO-1S
BOTTOM VIEW
1 CATHODE
2 ANODE
(PAD10, 20, 50 100)
1 CATHODE
2 ANODE
3 CASE
(PAD1, 2, 5)
-
ABSOLUTE MAXIMUM RATINGS (TA = 25 DC unless otherwise noted)
PARAMETERS/TEST CONDITIONS
Forward Current
Total Device Dissipation
Storage Temperature
Lead Temperature
(1/16" from case for 10 seconds)
SYMBOL
IF
PD
Tstg
TL
LIMIT
50
300
-55 to 125
300
UNITS
mA
mW
°C
4-107



PAD1
PAD1 SERIES
ELECTRICAL CHARACTERISTICS 1
PARAMETER
STATIC
Reverse Current
Reverse Breakdown Voltage
Forward Voltage Drop
DYNAMIC
SYMBOL
TEST CONDITIONS
IR
BVR
VF
VR =-20 V
PADl
PAD2
PADS
PAD10
PAD20
PADSO
PAD100
=IR -1 JJ,A
PAD1, 2, 5
PAD10, 20
PADSO, 100
IF =S rnA
Reverse Capacitance
==CR
VR -S V
f 1 MHz
PAD1, 2, 5
PAD10,20
PAD50, 100
=NOTES: 1. T A 25·C unless otherwise noted.
2. For design aid only, not subject to production testing.
~Siliconix
~ incorporated
TYp2
LIMITS
MIN
MAX
UNIT
-0.3
-0.7
-1
-2
-2
-S
-S
-60
-so
0.8
-1
-2
-S
-10
-20
-50
-100
pA
-45 -120
-3S V
1.5
O.S 0.8
pF
1.5 2
4-108




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