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PB210BI Datasheet

Part Number PB210BI
Manufacturers UNIKC
Logo UNIKC
Description MOSFET
Datasheet PB210BI DatasheetPB210BI Datasheet (PDF)

PB210BI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 230mΩ @VGS = 10V ID 9A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1,2 TC = 25 °C TC = 100 °C ID IDM 9 6 14 Avalanche Current IAS 16 Avalanche Energy L = 0.1 mH EAS 14 Power Dissipation TC = 25 °C TC = 100 °C PD 36 14 Oper.

  PB210BI   PB210BI






Part Number PB210BV
Manufacturers UNIKC
Logo UNIKC
Description MOSFET
Datasheet PB210BI DatasheetPB210BV Datasheet (PDF)

PB210BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 230mΩ @VGS = 10V ID 2.1A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TA = 25 °C TA = 70 °C ID IDM 2.1 1.7 17 Avalanche Current IAS 17 Avalanche Energy L =0.1mH EAS 15.4 Power Dissipation TA= 25 °C TA =70 °C PD 2.3 1.5 Jun.

  PB210BI   PB210BI







Part Number PB210BTF
Manufacturers UNIKC
Logo UNIKC
Description N-Channel MOSFET
Datasheet PB210BI DatasheetPB210BTF Datasheet (PDF)

PB210BTF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 230mΩ @VGS = 10V ID 8A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 8 5 30 Avalanche Current IAS 18 Avalanche Energy L = 0.1mH EAS 16 Power Dissipation TC = 25 °C TC = 100 °C PD 30 12 Operating Junction & Storage Temperat.

  PB210BI   PB210BI







Part Number PB210BM
Manufacturers UNIKC
Logo UNIKC
Description N-Channel MOSFET
Datasheet PB210BI DatasheetPB210BM Datasheet (PDF)

PB210BM N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 230mΩ @VGS = 10V ID 1.3A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C ID IDM 1.3 0.8 18 Avalanche Current IAS 18 Avalanche Energy L = 0.1mH EAS 16.5 Power Dissipation TA = 25 °C TA = 70 °C PD 0.75 0.3 Operating Junction & Storage .

  PB210BI   PB210BI







Part Number PB210BD
Manufacturers UNIKC
Logo UNIKC
Description N-Channel MOSFET
Datasheet PB210BI DatasheetPB210BD Datasheet (PDF)

PB210BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 230mΩ @VGS = 10V ID 10A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 10 6 40 Avalanche Current IAS 18 Avalanche Engergy L = 0.1 mH EAS 16.5 Power Dissipation TC = 25 °C TC = 100 °C PD 41 17 Operating Junction & Storage Temp.

  PB210BI   PB210BI







MOSFET

PB210BI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 230mΩ @VGS = 10V ID 9A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1,2 TC = 25 °C TC = 100 °C ID IDM 9 6 14 Avalanche Current IAS 16 Avalanche Energy L = 0.1 mH EAS 14 Power Dissipation TC = 25 °C TC = 100 °C PD 36 14 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. SYMBOL RqJC TYPICAL MAXIMUM UNITS 3.5 °C / W REV 1.0 1 2014-3-6 PB210BI N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX .


2017-02-06 : SST26VF032BA    SST26VF064B    SST26VF064BA    SST26WF016B    SST26WF016BA    SST38VF6401    SST38VF6402    SST38VF6403    P092ABD    P1003BDF   


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