PB560DZ
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 26mΩ @VGS = 4.5V
ID 7.8A
PDFN 2X3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain Current Pulsed Drain Current1
TA= 25 °C TA = 70 °C
ID IDM
7.8 6.2 40
Avalanche Current
IAS 10
Avalanche Energy3
EAS 4.9
Power Dissipation
TA = 25 °C TA= 70 °C
PD
2.4 1.5
Junction &.
MOSFET
PB560DZ
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 26mΩ @VGS = 4.5V
ID 7.8A
PDFN 2X3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain Current Pulsed Drain Current1
TA= 25 °C TA = 70 °C
ID IDM
7.8 6.2 40
Avalanche Current
IAS 10
Avalanche Energy3
EAS 4.9
Power Dissipation
TA = 25 °C TA= 70 °C
PD
2.4 1.5
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
52
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS °C / W
REV 1.0
1 2014-2-12
PB560DZ
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °.