MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by PBF259/D
High Voltage Transistors
NPN Silicon
COLLECTOR ...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by PBF259/D
High
Voltage Transistors
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER
PBF259 PBF259S
MAXIMUM RATINGS
Rating Collector – Emitter
Voltage Collector – Base
Voltage Emitter – Base
Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg PBF259,S 300 300 5.0 500 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/°C Watts mW/°C °C
1 2 3
CASE 29–04, STYLE 1 TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown
Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown
Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown
Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 250 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 10 Vdc) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO ICEO 300 300 5.0 — — — — — — 50 20 50 Vdc Vdc Vdc nAdc nAdc nAdc
v 300 ms; Duty Cycle v 2.0%.
Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996
1
PBF259 PBF259S
ELECTRICAL CHAR...