PBHV3160Z

PBHV3160Z 600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor 18 August 2014 Product data sheet 1. General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC High collector current gain hFE at high IC AEC-Q101 qualified 3. Applications Electronic ballast for fluorescent lighting LED driver for LED chain module LCD backlighting HID front lighting Automotive motor management Hook switch for wired telecom Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain Conditions open base VCE = -10 V; IC = -10 mA; Tamb = 25 °C Min Typ Max Unit - - -600 V - - -0.1 A 70 130 - Nexpe...