PBHV8115TLH
150 V, 1 A NPN high-voltage low VCEsat BISS transistor
10 January 2017
Product data sheet
1. General des...
PBHV8115TLH
150 V, 1 A NPN high-
voltage low VCEsat BISS transistor
10 January 2017
Product data sheet
1. General description
NPN high-
voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9115TLH
2. Features and benefits
High
voltage Low collector-emitter saturation
voltage VCEsat High collector current capability IC and ICM Small SMD plastic package AEC-Q101 qualified
3. Applications
Power management LCD backlighting LED driver for LED chain module Switch Mode Power Supply (SMPS)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VCEO
collector-emitter
voltage
IC collector current
ICM peak collector current
hFE DC current gain
Conditions open base
single pulse; tp ≤ 1 ms VCE = 10 V; IC = 50 mA; Tamb = 25 °C
Min Typ Max Unit - - 150 V
--70 -
1A 2A 300
NXP Semiconductors
PBHV8115TLH
150 V, 1 A NPN high-v...
