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PBHV8540X Datasheet

Part Number PBHV8540X
Manufacturers nexperia
Logo nexperia
Description NPN Transistor
Datasheet PBHV8540X DatasheetPBHV8540X Datasheet (PDF)

SOT89 PBHV8540X 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 5 December 2013 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040X. 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain .

  PBHV8540X   PBHV8540X






Part Number PBHV8540Z
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description 0.5A NPN high-voltage low VCEsat(BISS) transistor
Datasheet PBHV8540X DatasheetPBHV8540Z Datasheet (PDF)

PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 — 7 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040Z. 1.2 Features I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE.

  PBHV8540X   PBHV8540X







Part Number PBHV8540T
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description 0.5A NPN high-voltage low VCEsat (BISS) transistor
Datasheet PBHV8540X DatasheetPBHV8540T Datasheet (PDF)

PBHV8540T 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 — 5 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040T. 1.2 Features I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at .

  PBHV8540X   PBHV8540X







NPN Transistor

SOT89 PBHV8540X 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 5 December 2013 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040X. 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • AEC-Q101 qualified 3. Applications • LED driver for LED chain module • LCD backlighting • Automotive motor management • Hook switch for wired telecom • Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1. Symbol VCESM VCEO IC hFE Quick reference data Parameter Conditions collector-emitter peak VBE = 0 V voltage collector-emitter voltage open base collector current DC current gain VCE = 10 V; IC = 50 mA; Tamb = 25 °C Min Typ Max Unit -.


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