DatasheetsPDF.com

PBHV8560Z Datasheet

Part Number PBHV8560Z
Manufacturers nexperia
Logo nexperia
Description NPN transistor
Datasheet PBHV8560Z DatasheetPBHV8560Z Datasheet (PDF)

PBHV8560Z 600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 13 March 2015 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9560Z 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability • High collector current gain hFE at high IC • AEC-Q101 qualified 3. Applicati.

  PBHV8560Z   PBHV8560Z






Part Number PBHV8560Z
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description 0.5 A NPN high-voltage low VCEsat (BISS) transistor
Datasheet PBHV8560Z DatasheetPBHV8560Z Datasheet (PDF)

SOT223 PBHV8560Z 600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 13 March 2015 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9560Z 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability • High collector current gain hFE at high IC • AEC-Q101 qualified 3. A.

  PBHV8560Z   PBHV8560Z







NPN transistor

PBHV8560Z 600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 13 March 2015 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9560Z 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability • High collector current gain hFE at high IC • AEC-Q101 qualified 3. Applications • Electronic ballast for fluorescent lighting • LED driver for LED chain module • LCD backlighting • High Intensity Discharge (HID) front lighting • Automotive motor management • Hook switch for wired telecom • Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain Conditions open base VCE = 10 V; IC = 50 mA; Tamb = 25 °C Min Typ Max Unit - - 600 V - - 0.5 A 70 135 - Nexperia PBHV8560Z 600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 C collector 3 E emitter 4 C collector Simplified outline 4 123 SC-73 (SOT223) Graphic symbol 2, 4 1 3 sym016 6. Ordering information Table 3. Ordering information Type number Package Name PBHV8560Z SC-73 Description plastic surface-mounted package with increased heatsink; 4 leads Version SOT223 7. Marking Table 4. Mark.


2019-07-21 : PDTA123YS    PDTA123YM    PDTA123YK    PDTA124EM    PDTA143EU    PDTA143ET    PDTA143EM    PDTD123YU    PDTD123EU    PDTD113EU   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)