PBHV9540Z

PBHV9540Z 500 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8140Z. 1.2 Features „ High voltage „ Low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ AEC-Q101 qualified „ Medium power SMD plastic package 1.3 Applications „ LED driver for LED chain module „ LCD backlighting „ Automotive motor management „ Switch Mode Power Supply (SMPS) 1.4 Quick reference data Table 1. Symbol VCESM VCEO IC hFE Quick reference data Parameter collector-emitter peak voltage collector-emitter voltage collector current DC current gain [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. Conditions VBE = 0 V open base VCE = −10 V; IC ...