PBRN113ZT

PBRN113Z series NPN 800 mA, 40 V BISS RETs; R1 = 1 kΩ, R2 = 10 kΩ Rev. 01 — 26 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package Nexperia PBRN113ZK SOT346 PBRN113ZS[1] SOT54 PBRN113ZT SOT23 JEITA SC-59A SC-43A - [1] Also available in SOT54A and SOT54 variant packages (see Section 2). JEDEC TO-236 TO-92 TO-236AB 1.2 Features I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.3 Applications I Digital application in automotive and industrial segments I Medium current peripheral driver I Switching loads 1.4 Quick reference data Table 2. Symbol VCEO IO Quick reference data Parameter Conditions collector-emitter voltage open base output current PBRN113ZK, PBRN113ZT PBRN113ZS Min Typ Max Unit - - 40 V [1] - - 600 mA - - 800 mA Nexperia PBRN113Z series NPN 800 mA, 40 V BISS RETs; R1 = 1 kΩ, R2 = 10 kΩ Table 2. Symbol IORM R1 R2/R1 Quick reference data …continued Parameter Conditions repetitive peak output current PBRN113ZK, PBRN113ZT tp ≤ 1 ms; δ ≤ 0.33 bias resistor 1 (input) bias resistor ratio Min Typ Max Unit -0.7 1 9 10 800 mA 1.3 kΩ 11 [1...