PBSM5240PFH
40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET
Rev. 1 — 20 June 2012
Product dat...
PBSM5240PFH
40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench
MOSFET
Rev. 1 — 20 June 2012
Product data sheet
1. Product profile
1.1 General description
Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench Metal-Oxide Semiconductor Field- Effect Transistor (
MOSFET). The device is housed in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
Very low collector-emitter saturation
voltage VCEsat High collector current capability IC and ICM High energy efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
Load switch Power management Power switches (e.g. motors, fans)
Battery-driven devices Charging circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
PNP low VCEsat (BISS) transistor
VCEO colle...
