| Part Number | PBSS301ND |
| Manufacturer | NXP (https://www.nxp.com/) |
| Title | 4A NPN transistor |
| Description | NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. PNP complement: PBSS301PD. 1.2 Features s ... |
| Features |
s s s s s Very low collector-emitter saturation resistance Ultra low collector-emitter saturation voltage 4 A continuous collector current Up to 15 A peak current High efficiency due to less heat generation
1.3 Applications
s s s s s s Power management functions Charging circuits DC-to-DC conversion... |
| Datasheet | PBSS301ND pdf datasheet |
| Part Number | PBSS301NZ |
| Manufacturer | nexperia |
| Title | 5.8A NPN transistor |
| Description | NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP compleme. |
| Features |
Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
DC-t. |
| Datasheet | PBSS301NZ pdf datasheet |
| Part Number | PBSS301NX |
| Manufacturer | nexperia |
| Title | 5.3A NPN transistor |
| Description | NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic p. |
| Features |
Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
DC-t. |
| Datasheet | PBSS301NX pdf datasheet |
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