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PBSS4021NZ Datasheet

Part Number PBSS4021NZ
Manufacturers nexperia
Logo nexperia
Description NPN transistor
Datasheet PBSS4021NZ DatasheetPBSS4021NZ Datasheet (PDF)

PBSS4021NZ 20 V, 8 A NPN low VCEsat (BISS) transistor Rev. 01 — 31 March 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4021PZ. 1.2 Features and benefits „ Very low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ High energ.

  PBSS4021NZ   PBSS4021NZ






Part Number PBSS4021NZ
Manufacturers NXP
Logo NXP
Description 8 A NPN low VCEsat (BISS) transistor
Datasheet PBSS4021NZ DatasheetPBSS4021NZ Datasheet (PDF)

www.DataSheet4U.com PBSS4021NZ 20 V, 8 A NPN low VCEsat (BISS) transistor Rev. 01 — 31 March 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4021PZ. 1.2 Features and benefits „ „ „ „ „ „ Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE.

  PBSS4021NZ   PBSS4021NZ







NPN transistor

PBSS4021NZ 20 V, 8 A NPN low VCEsat (BISS) transistor Rev. 01 — 31 March 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4021PZ. 1.2 Features and benefits „ Very low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ High energy efficiency due to less heat generation „ AEC-Q101 qualified „ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ Loadswitch „ Battery-driven devices „ Power management „ Charging circuits „ Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter Conditions collector-emitter voltage open base collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = 6 A; IB = 600 mA [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. Min Typ Max Unit - - 20 V - - 8A - - 20 A [1] - 14 20 mΩ Nexperia PBSS4021NZ 20 V, 8 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 4 Pinning Description base collector emitter collector Simplified outline Graphic symbol 4 2, 4 123 1 3 sym016 3. Ordering information Table 3. Ordering information Type number Package Name Description PBSS4021NZ SC-73 plasti.


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