PBSS4021PX

www.DataSheet4U.com PBSS4021PX 20 V, 6.2 A PNP low VCEsat (BISS) transistor Rev. 01 — 1 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4021NX. 1.2 Features and benefits „ „ „ „ „ „ Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ „ „ „ „ Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = −4 A; IB = −400 mA [1] Conditions open base Min - Typ 23 Max −20 −6.2 −15 38 Unit V A A mΩ Pulse test: tp ≤ 300 μs; δ ≤ 0.02. w w w . D a t a S h e e t 4 U . c o NXP Semiconductors PBSS4021PX 20 V, 6.2 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description emitter collector base 3 2 1 3 1 006aaa231 Simplified outline Graphic symbol 2 3. Ordering information Table 3. Ordering information Package N...