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PBSS4032NX
30 V, 4.7 A NPN low VCEsat (BISS) transistor
Rev. 01 — 1 April 2010 Product data sheet
...
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PBSS4032NX
30 V, 4.7 A NPN low VCEsat (BISS) transistor
Rev. 01 — 1 April 2010 Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PX.
1.2 Features and benefits
Very low collector-emitter saturation
voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM RCEsat
[1]
Quick reference data Parameter collector-emitter
voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = 4 A; IB = 400 mA
[1]
Conditions open base
Min -
Typ 45
Max 30 4.7 10 62.5
Unit V A A mΩ
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
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NXP Semiconductors
PBSS4032NX
30 V, 4.7 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description emitter collector base
3 2 1
3 1
sym042
Simplified outline
Graphic symbol
2
3. Ordering information
Table 3. Ordering information Package Name PBSS...