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PBSS4032PZ Datasheet

Part Number PBSS4032PZ
Manufacturers NXP
Logo NXP
Description 4.4 A PNP low VCEsat (BISS) transistor
Datasheet PBSS4032PZ DatasheetPBSS4032PZ Datasheet (PDF)

www.DataSheet4U.com PBSS4032PZ 30 V, 4.4 A PNP low VCEsat (BISS) transistor Rev. 01 — 31 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4032NZ. 1.2 Features and benefits „ „ „ „ „ „ „ Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High col.

  PBSS4032PZ   PBSS4032PZ






Part Number PBSS4032PZ
Manufacturers nexperia
Logo nexperia
Description PNP transistor
Datasheet PBSS4032PZ DatasheetPBSS4032PZ Datasheet (PDF)

PBSS4032PZ 30 V, 4.4 A PNP low VCEsat (BISS) transistor Rev. 01 — 31 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4032NZ. 1.2 Features and benefits „ Low collector-emitter saturation voltage VCEsat „ Optimized switching time „ High collector current capability IC and ICM „ High collector current gain (hFE).

  PBSS4032PZ   PBSS4032PZ







4.4 A PNP low VCEsat (BISS) transistor

www.DataSheet4U.com PBSS4032PZ 30 V, 4.4 A PNP low VCEsat (BISS) transistor Rev. 01 — 31 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4032NZ. 1.2 Features and benefits „ „ „ „ „ „ „ Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ „ „ „ DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = −4 A; IB = −400 mA [1] Conditions open base Min - Typ 58 Max −30 −4.4 −10 86 Unit V A A mΩ Pulse test: tp ≤ 300 μs; δ ≤ 0.02. w w w . D a t a S h e e t 4 U . c o NXP Semiconductors PBSS4032PZ 30 V, 4.4 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 4 Pinning Description base collector emitter collector 1 2 3 3 sym028 Simplified outline 4 Graphic symbol 2, 4 1 3. Ordering information Table 3. Ordering information Package Name .


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