PBSS4032SP

DataSheet.in PBSS4032SP 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor Rev. 1 — 14 July 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Package NXP PBSS4032SP SOT96-1 Name SO8 NPN/NPN complement PBSS4032SN NPN/PNP complement PBSS4032SPN Type number 1.2 Features and benefits „ „ „ „ „ „ Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ „ „ „ DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick reference data Table 2. VCEO IC ICM RCEsat [1] Quick reference data Conditions open base single pulse; tp ≤ 1 ms IC = −4 A; IB = −0.4 A [1] Symbol Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance Min - Typ 65 Max −30 −4.8 −10 98 Unit V A A mΩ Pulse test: tp ≤ 300 μs; δ ≤ 0.02. D a t a S h e e t . i n NXP Semiconductors PBSS4032SP 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor 2. Pinning information Table 3. Pin 1 2 3 4 5 6 7 8 Pinning Description emitter TR1 base TR1 emitter TR2 TR1 TR2 Simplified outline Graphic symbol 8 7...