PBSS4032SPN

DataSheet.in PBSS4032SPN 30 V NPN/PNP low VCEsat (BISS) transistor Rev. 1 — 14 July 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Package NXP PBSS4032SPN SOT96-1 Name SO8 NPN/NPN complement PBSS4032SN PNP/PNP complement PBSS4032SP Type number 1.2 Features and benefits „ „ „ „ „ „ Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ „ „ „ DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick reference data Table 2. Quick reference data Conditions open base single pulse; tp ≤ 1 ms IC = 4 A; IB = 0.4 A [1] Symbol Parameter TR1; NPN low VCEsat transistor VCEO IC ICM RCEsat collector-emitter voltage collector current peak collector current collector-emitter saturation resistance Min - Typ 45 Max 30 5.7 10 62.5 Unit V A A mΩ DataSheet.in NXP Semiconductors PBSS4032SPN 30 V NPN/PNP low VCEsat (BISS) transistor Quick reference data …continued Conditions open base single pulse; tp ≤ 1 ms IC = −4 A; IB = −0.4 A [1] Table 2. Symbol Parameter TR2; PNP low VCEsat transistor VCEO IC ICM RCEsat collect...