PBSS4041PX
60 V, 5 A PNP low VCEsat (BISS) transistor
Rev. 01 — 1 April 2010
Product data sheet
1. Product profile
1....
PBSS4041PX
60 V, 5 A PNP low VCEsat (BISS) transistor
Rev. 01 — 1 April 2010
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4041NX.
1.2 Features and benefits
Very low collector-emitter saturation
voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage open base
collector current
peak collector current
collector-emitter saturation resistance
single pulse; tp ≤ 1 ms
IC = −4 A; IB = −400 mA
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Min Typ Max Unit - - −60 V - - −5 A - - −15 A
[1] -
40 60 mΩ
Nexperia
PBSS4041PX
60 V, 5 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pin 1 2 3
Pinning Description emitter collector base
Simplified outline Graphic symbol
321
2
3
1 006aaa231
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
PBSS4041PX SC-62
pla...