PBSS4112PAN
120 V, 1 A NPN/NPN low VCEsat (BISS) transistor
29 November 2012
Product data sheet
1. Product profile
...
PBSS4112PAN
120 V, 1 A NPN/NPN low VCEsat (BISS) transistor
29 November 2012
Product data sheet
1. Product profile
1.1 General description
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. PNP/PNP complement: PBSS5112PAP.
1.2 Features and benefits
Very low collector-emitter saturation
voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High energy efficiency due to less heat generation AEC-Q101 qualified
1.3 Applications Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
VCEO
collector-emitter
voltage
IC collector current
ICM peak collector current
Per transistor
RCEsat
collector-emitter saturation resistance
Conditions open base
single pulse; tp ≤ 1 ms IC = 500 mA; IB = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - 120 V - - 1A - - 1.5 A
- - 240 mΩ
Nexperia
PBSS4112PAN
120 V, 1 A NPN/NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pinning information Pin Symbol Description 1 E1 emitter TR1 2 B1 base TR1 3 C2 collector TR2 4 E2 emitter TR2 5 B2 base TR2 6 C1 collector TR1 7 C1 collector TR1 8 C2 collector TR2
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