PBSS4160PAN

DF N2 020 -6 PBSS4160PAN 14 January 2013 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4160PANP. PNP/PNP complement: PBSS5160PAP. 2. Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Symbol Per transistor VCEO IC ICM Per transistor RCEsat collector-emitter saturation resistance IC = 0.5 A; IB = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 240 mΩ collector-emitter voltage collector current peak collector current single pulse; tp ≤ 1 ms open base 60 1 1.5 V A A Quick reference data Parameter Conditions Min Typ Max Unit Scan or click this QR code to view the latest information for this product Free Datasheet http://www.datasheet4u.com/ NXP Semiconductors PBSS4160PAN 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 5. Pinning information Table 2. Pin 1 2 3 4 5 6 7 8 Pinning information Symbol Description E1 B1 C2 E2 B2 C1 C1 C2 emitter TR1 ba...