PBSS4240V

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS4240V 40 V low VCEsat NPN transistor Product data sheet 2003 Jan 30 NXP Semiconductors 40 V low VCEsat NPN transistor Product data sheet PBSS4240V FEATURES Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency leading to reduced heat generation Reduced printed-circuit board area requirements. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICRP RCEsat collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. UNIT 40 V 2A 2A <190 mΩ APPLICATIONS Power management: – DC-DC converter – Supply line switching – Battery charger – LCD back lighting. Peripheral driver: – Driver in low supply voltage applications (e.g. lamps and LEDs) – Inductive load drivers (e.g. relay, buzzers and motors). DESCRIPTION NPN transistor providing low VCEsat and high current capability in a SOT666 plastic package. PNP complement: PBSS5240V. MARKING TYPE NUMBER PBSS4240V MARKING CODE 42 PINNING PIN 1 2 3 4 5 6 collector collector base emitter collector collector DESCRIPTION handbook, halfpage 6 5 4 1, 2, 5, 6 3 123 Top view MAM444 4 Fig.1 Simplified outline (SOT666) and symbol. 2003 Jan 30 2 NXP Semiconductors 40 V low VCEsat NPN transistor Product data sheet PBSS4240V LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VCBO...