PBSS4320X

PBSS4320X 20 V, 3 A NPN low VCEsat (BISS) transistor 27 May 2019 Product data sheet 1. General description NPN low VCEsat transistor in a medium power flat lead SOT89 plastic package. PNP complement: PBSS5320X 2. Features and benefits SOT89 (SC-62) package Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM Higher efficiency leading to less heat generation Reduced printed-circuit board requirements. AEC-Q101 qualified 3. Applications Power management DC/DC converters Supply line switching Battery charger LCD backlighting. Peripheral drivers Driver in low supply voltage applications (e.g. lamps and LEDs). Inductive load driver (e.g. relays, buzzers and motors). 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current ICM peak collector current hFE DC current gain RCEsat collector-emitter saturation resistance Conditions open base single pulse; tp ≤ 1 ms VCE = 2 V; IC = 0.1 A IC = 3 A; IB = 300 mA [1] [2] [1] Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated. [2] Pulsed test: tp ≤ 300 μs; δ ≤ 0.02 Min Typ Max Unit - - 20 V --220 - 85 3A 5A 105 mΩ Nexperia 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E emitter 2 C collector 3 B base PBSS4320X 20 V, 3 A NPN low VCEsat (BISS) transistor Simplified outline 321 SOT89 Graphic symbol C B E sym123 6. Ord...