DF N2 020 D-3
PBSS4330PAS
11 September 2014
30 V, 3 A NPN low VCEsat (BISS) transistor
Product data sheet
1. General...
DF N2 020 D-3
PBSS4330PAS
11 September 2014
30 V, 3 A NPN low VCEsat (BISS) transistor
Product data sheet
1. General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. PNP complement: PBSS5330PAS
2. Features and benefits
Low collector-emitter saturation
voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation High temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) area requirements Leadless small SMD plastic package with soldarable side pads Exposed heat sink for excellent thermal and electrical conductivity Suitable for Automatic Optical Inspection (AOI) of solder joint AEC-Q101 qualified
3. Applications
Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter
voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = 3 A; IB = 300 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C Conditions open base Min Typ 75 Max 30 3 5 100 Unit V A A mΩ
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