PBSS4440D

PBSS4440D 40 V NPN low VCEsat (BISS) transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. PNP complement: PBSS5440D. 1.2 Features „ Ultra low collector-emitter saturation voltage VCEsat „ 4 A continuous collector current capability IC (DC) „ Up to 15 A peak current „ Very low collector-emitter saturation resistance „ High efficiency due to less heat generation 1.3 Applications „ Power management functions „ Charging circuits „ DC-to-DC conversion „ MOSFET gate driving „ Power switches (e.g. motors, fans) „ Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter Conditions Min collector-emitter voltage open base - collector current (DC) [1] - peak collector current collector-emitter saturation resistance t = 1 ms or limited by Tj(max) IC = 6 A; IB = 600 mA [2] - Typ - 55 [1] Device mounted on a ceramic Printed-Circuit Board (PCB), AL2O3, standard footprint. [2] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. Max Unit 40 V 4A 15 A 75 mΩ NXP Semiconductors PBSS4440D 40 V NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning Description collector collector base emitter collector collector Simplified outline Symbol 654 123 1, 2, 5, 6 3 4 sym014 3. Ordering information Table 3. Ordering information Typ...