PBSS5240X

PBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240X. 1.2 Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency due to less heat generation 1.3 Applications DC-to-DC conversion Supply line switching Battery charger LCD backlighting Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat ICRM Quick reference data Parameter Conditions collector-emitter voltage open base collector current peak collector current collector-emitter saturation resistance repetitive peak collector current IC = -1 A; IB = -100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C tp ≤ 20 ms; δ ≤ 0.33 ; pulsed Min Typ Max Unit - - -40 V - - -2 A - - -3 A - - 310 mΩ - - -2.5 A Scan or click this QR code to view the latest information for this product NXP Semiconductors PBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 E emitter 2 C collector 3 B base Simplified outline 321 SOT89 Graphic symbol C B E sym132 3. Ordering information Table 3. Orde...