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PBSS5240Z Datasheet

Part Number PBSS5240Z
Manufacturers nexperia
Logo nexperia
Description 2A PNP low VCEsat (BISS) transistor
Datasheet PBSS5240Z DatasheetPBSS5240Z Datasheet (PDF)

PBSS5240Z 40 V, 2 A PNP low VCEsat (BISS) transistor 15 October 2014 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240Z 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High energy efficiency due to less heat generation • AEC-Q101 qualified 3. Applications • DC-t.

  PBSS5240Z   PBSS5240Z






Part Number PBSS5240Y
Manufacturers NXP
Logo NXP
Description PNP Transistor
Datasheet PBSS5240Z DatasheetPBSS5240Y Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET fpage MBD128 PBSS5240Y 40 V low VCEsat PNP transistor Product data sheet Supersedes data of 2001 Oct 24 2002 Feb 28 NXP Semiconductors 40 V low VCEsat PNP transistor Product data sheet PBSS5240Y FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance. APPLICATIONS • Supply line switc.

  PBSS5240Z   PBSS5240Z







Part Number PBSS5240X
Manufacturers nexperia
Logo nexperia
Description PNP transistor
Datasheet PBSS5240Z DatasheetPBSS5240X Datasheet (PDF)

PBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240X. 1.2 Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency due to less heat generation 1.3 Applications • DC-.

  PBSS5240Z   PBSS5240Z







Part Number PBSS5240X
Manufacturers NXP
Logo NXP
Description transistor
Datasheet PBSS5240Z DatasheetPBSS5240X Datasheet (PDF)

PBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240X. 1.2 Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency due to less heat generation 1.3 Applications • DC-.

  PBSS5240Z   PBSS5240Z







Part Number PBSS5240V
Manufacturers NXP
Logo NXP
Description 40 V low VCEsat PNP transistor
Datasheet PBSS5240Z DatasheetPBSS5240V Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS5240V 40 V low VCEsat PNP transistor Product specification 2003 Jan 30 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC • High efficiency leading to reduced heat generation • Reduced printed-circuit board area requirements. APPLICATIONS • Power management: – DC-DC conve.

  PBSS5240Z   PBSS5240Z







2A PNP low VCEsat (BISS) transistor

PBSS5240Z 40 V, 2 A PNP low VCEsat (BISS) transistor 15 October 2014 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240Z 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High energy efficiency due to less heat generation • AEC-Q101 qualified 3. Applications • DC-to-DC conversion • Supply line switching • Battery charger • LCD backlighting • Driver in low supply voltage applications (e.g. lamps and LEDs) • Inductive load driver (e.g. relays, buzzers and motors) 4. Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter Conditions collector-emitter voltage open base collector current peak collector current tp ≤ 1 ms; single pulse collector-emitter saturation resistance IC = -1 A; IB = -100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C Min Typ Max Unit - - -40 V - - -2 A - - -3 A - - 320 mΩ Nexperia PBSS5240Z 40 V, 2 A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 C collector 3 E emitter 4 C collector Simplified outline 4 123 SC-73 (SOT223) Graphic symbol 2, 4 1 3 sym028 6. Ordering information Table 3. Ordering information Type number Package Name PBSS5240Z SC-73 Description plastic surface-mounted package with incr.


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