PBSS5250TH
50 V, 2 A PNP low VCEsat (BISS) transistor
9 August 2017
Product data sheet
1. General description
PNP low ...
PBSS5250TH
50 V, 2 A PNP low VCEsat (BISS) transistor
9 August 2017
Product data sheet
1. General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
Low collector-emitter saturation
voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC Higher efficiency leading to less heat genereation High temperature applications up to 175 °C AEC-Q101 qualified
3. Applications
Power management DC-to-DC conversion Supply line switches Battery charger switches Peripheral drivers Driver in low supply
voltage applications (e.g. lamps and LEDs) Inductive load driver
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VCEO
collector-emitter
voltage
IC ICM RCEsat
collector current
peak collector current
collector-emitter saturation resistance
Conditions open base
single pulse; tp ≤ 1 ms IC = -2 A; IB = -200 mA; Tamb = 25 °C
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02
[1]
Min Typ Max Unit - - -50 V
- - -2 A - - -3 A - - 150 mΩ
Nexperia
PBSS5250TH
50 V, 2 A PNP low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 B base 2 E emitter 3 C collector
Simplified outline
3
12
TO-236AB (SOT23)
Graphic symbol
C
B
E sym132
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PBSS5250TH
TO-236...