PBSS5260PAP
60 V, 2 A PNP/PNP low VCEsat (BISS) transistor
12 December 2012
Product data sheet
1. General descriptio...
PBSS5260PAP
60 V, 2 A PNP/PNP low VCEsat (BISS) transistor
12 December 2012
Product data sheet
1. General description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4260PANP. NPN/NPN complement: PBSS4260PAN.
2. Features and benefits
Very low collector-emitter saturation
voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q101 qualified
3. Applications
Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
VCEO
collector-emitter
voltage
IC collector current
ICM peak collector current
Per transistor
RCEsat
collector-emitter saturation resistance
Conditions open base
single pulse; tp ≤ 1 ms IC = -1 A; IB = -100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - -60 V - - -2 A - - -3 A
- - 250 mΩ
Nexperia
PBSS5260PAP
60 V, 2 A PNP/PNP low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 E1 emitter TR1 2 B1 base TR1 3 C2 collector TR2 4 E2 emitter TR2 5 B2 base TR2 6 C1 collector TR1 7 C1 collector TR1 8 C2 collector TR2
Simplified outline
654
Graphic ...