PBSS5330PA

HUSON3 PBSS5330PA 30 V, 3 A PNP low VCEsat (BISS) transistor 7 April 2015 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4330PA. 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability 3. Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter Conditions collector-emitter voltage open base collector current peak collector current single pulse; tp ≤ 1 ms collector-emitter saturation resistance IC = -3 A; IB = -300 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C Min Typ Max Unit - - -30 V - - -3 A - - -5 A - 75 107 mΩ Scan or click this QR code to view the latest information for this product NXP Semiconductors PBSS5330PA 30 V, 3 A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 E emitter 3 C collector Simplified outline 3 Graphic symbol 3 1 ...