PBSS5350D
50 V, 3 A PNP low VCEsat (BISS) transistor
Rev. 6 — 28 June 2011
Product data sheet
1. Product profile
1.1 ...
PBSS5350D
50 V, 3 A PNP low VCEsat (BISS) transistor
Rev. 6 — 28 June 2011
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4350D
1.2 Features and benefits
Low collector-emitter saturation
voltage VCEsat
High current capability High efficiency due to less heat
generation
AEC-Q101 qualified
Smaller Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
Supply line switching circuits Battery management applications
DC-to-DC conversion
1.4 Quick reference data
Table 1. Symbol VCEO
IC ICM RCEsat
Quick reference data
Parameter
collector-emitter
voltage
collector current
peak collector current
collector-emitter saturation resistance
Conditions open base
IC = -2 A; IB = -200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit - - -50 V
- - -3 A - - -5 A - 120 150 mΩ
Nexperia
PBSS5350D
50 V, 3 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pin 1 2 3 4 5 6
Pinning information Symbol Description C collector C collector B base E emitter C collector C collector
3. Ordering information
Simplified outline
654
123
SOT457 (TSOP6)
Graphic symbol
1, 2, 5, 6 3
4 sym030
Table 3. Ordering information
Type number
Package
Name
PBSS5350D
TSOP6
4. Marking
Description plastic surface-mounted package (TSOP6); 6 leads
Version SOT457
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