256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash Features
Parallel NOR Flash Embedded Memory
JS28F256M29EWxx, PC28...
256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash Features
Parallel NOR Flash Embedded Memory
JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx JS28F512M29EWxx, PC28F512M29EWxx, RC28F512M29EWxx JS28F00AM29EWxx, PC28F00AM29EWxx, RC28F00AM29EWxx PC28F00BM29EWxx, RC28F00BM29EWxx
Features
2Gb = stacked device (two 1Gb die) Supply
voltage
– VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65–VCC (I/O buffers) Asynchronous random/page read – Page size: 16 words or 32 bytes – Page access: 25ns – Random access: 100ns (Fortified BGA);
110ns (TSOP) Buffer program: 512-word program buffer Program time
– 0.88µs per byte (1.14 MB/s) TYP when using full 512-word buffer size in buffer program
Memory organization – Uniform blocks: 128-Kbytes or 64-Kwords each
Program/erase controller – Embedded byte (x8)/word (x16) program algorithms
Program/erase suspend and resume capability – Read from another block during a PROGRAM SUSPEND operation – ...
