PC561BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
45mΩ @VGS = -10V
ID -5.7A
SOT-89
...
PC561BA
P-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
45mΩ @VGS = -10V
ID -5.7A
SOT-89
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source
Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
-5.7 -4.5 -20
Avalanche Current
IAS -12
Avalanche Energy
L = 0.1mH
EAS
7
Power Dissipation3
TA = 25 °C TA = 70 °C
PD
2.5 1.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL
Junction-to-Ambient2 Junction-to-Ambient2
t ≦10s Steady-State
RqJA RqJA
Junction-to-Case
Steady-State
RqJC
1Pulse width limited by maximum junction temperature.
2 The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper.
3The Power dissipation is based on RqJA t ≦10s value.
MAXIMUM UNITS 50 73 °C / W 18
REV 1.0
1 201...