NIKO-SEM
Dual N-Channel Enhancement Mode Field Effect Transistor
PD1503YVS
SOP-8 Halogen-Free & Lead-Free
PRODUCT SU...
NIKO-SEM
Dual N-Channel Enhancement Mode Field Effect Transistor
PD1503YVS
SOP-8 Halogen-Free & Lead-Free
PRODUCT SUMMARY V(BR)DSS Q2 Q1 30V 30V RDS(ON) 15.8mΩ 21mΩ ID 9A 8A
1 2 3 4
Q2 Q1
8 7 6 5
G : GATE D : DRAIN S : SOURCE
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range L = 0.1mH TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C SYMBOL VDS VGS ID IDM IAS EAS PD Tj, Tstg Q2 30 ±20 9 7 35 29 43 2 1.28 -55 to 150 °C Q1 30 ±20 8 6 30 21 23 mJ W A UNITS V V
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Reverse Current Forward
Voltage THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient
1
SYMBOL IR VF TYPICAL
Schottky 0.05 0.45 MAXIMUM 62.5
UNITS mA V UNITS °C / W
VR = 25V IF = 1A SYMBOL RJA
Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (T A = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown
Voltage V(BR)DSS VGS = 0V, ID = 250A Q2 Q1 Q2 Q1 30 30 1 1 1.7 2 3 3 Oct-28-2009 1
Free Datasheet http://www.datasheet4u.com/
UNIT
MIN
TYP MAX
V
Gate Threshold
Voltage
VGS(th)
VDS = VGS, ID = 250A
REV 0.9
NIKO-SEM
Dual N-Channel Enhancement Mode Field Effect Transistor
PD1503YVS
SOP-8 Halogen-Free & Lead-Free
Gat...