PD510BA

PD510BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 4.3mΩ @VGS = 10V ID 92A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 92 58 180 Avalanche Current IAS 38 Avalanche Energy L =0.1mH EAS 74.2 Power Dissipation TC = 25 °C TC = 100 °C PD 62.5 25 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Case RqJC Junction-to-Ambient RqJA 1Pulse width limited by maximum junction temperature. 2Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 40A. MAXIMUM 2 62.5 UNITS °C / W REV 1.0 1 2013-12-24 PD510BA N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (T...